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 SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF16006/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. * Specified 28 Volt, 1.6 GHz Class-C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1500 MHz to 1700 MHz * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
MRF16006
6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON
CASE 395C-01, STYLE 2
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCES VEBO IC PD Tstg Value 60 4.0 1.0 26 0.15 -65 to +150 Unit Vdc Vdc Adc Watts W/C C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case (1) (2) RJC 6.8 C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
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MRF16006
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES 55 V(BR)CBO 55 V(BR)EBO 4.0 ICES -- -- 2.5 -- -- mAdc -- -- Vdc -- -- Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (ICE = 0.2 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB= 28 Vdc, f = 1.0 MHz) Cob 11 -- -- pf
FUNCTIONAL TESTS
Common-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Return Loss (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Output Mismatch Stress (VCC = 28 Vdc, Pout = 6 Watts, f = 1600 MHz, Load VSWR = 3:1 all phase angles at frequency of test) Gpe 7.4 40 IRL -- No Degradation in Output Power 8.0 -- 45 -- dB -- -- % dB
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L3 B1 L2 C1 R1 C2 C3 C4 28 Vdc
L1
C5
Board Material - Teflon(R) Glass Laminate Dielectric Thickness - 0.30, r = 2.55, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 F, Dipped Mica Cap 0.1 F, Chip Cap C4 L1, L2 L3 R1 47 F, 50 V, Electrolytic Cap 3 Turns, #18, 0.133 ID, 0.15 Long 9 Turns, #24 Enamel 82 , 1.0 W, Carbon Resistor
Figure 1. MRF16006 Test Fixture Schematic
f = 1.5 GHz 1.6 GHz
Zin 1.7 GHz
1.7 GHz 1.6 GHz f = 1.5 GHz VCC = 28 Vdc, Pout = 6 W f MHz 1500 1600 1700 Zin Ohms 6.28 + j 8.53 7.04 + j 9.00 9.55 + j 12.86 ZOL* Ohms 1.22 - j 1.37 1.58 - j 0.53 1.71 + j 0.39 ZOL*
Zo = 10
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 2. Series Equivalent Input/Output Impedance
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12 Pout , OUTPUT POWER (WATTS) 10 f = 1.6 GHz 8 6
4
1.64 GHz
VCC = 28 Vdc
2 0 0.25
0.45
0.65 0.85 1.05 Pin, INPUT POWER (WATTS)
1.25
1.45
Figure 3. Output Power versus Input Power
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PACKAGE DIMENSIONS
-A- U
1
Q 2 PL 0.51 (0.020)
M
TA
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
-B-
3 DIM A B C D E H J K N Q U
K
2
D N J H C -T-
SEATING PLANE
E
STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE
INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC
MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC
CASE 395C-01 ISSUE A
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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